Micron Technology DRAM SDRAM-DDR3, Part #: MT41K256M8DA-125 AAT:K TR features: • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • Refresh maximum interval time at TC temperature range – 64ms at –40°C to +85°C – 32ms at +85°C to +105°C – 16ms at +105°C to +115°C – 8ms at +115°C to +125°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration • AEC-Q100 • PPAP submission • 8D response time

MIL:MT41K256M8DA-125 AAT K TR

MT41K256M8DA-125 AAT:K TR