Micron Technology DRAM SDRAMMobile-, Part #: MT53E128M32D2DS-046 AIT:A features: • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70–1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal • Frequency range – 2133–10 MHz (data rate range: 4266–20 Mb/s/ pin) • 16n prefetch DDR architecture • 8 internal banks per channel for concurrent operation • Single-data-rate CMD/ADR entry • Bidirectional/differential data strobe per byte lane • Programmable READ and WRITE latencies (RL/WL) • Programmable and on-the-fly burst lengths (BL = 16, 32) • Directed per-bank refresh for concurrent bank operation and ease of command scheduling • Up to 8.5 GB/s per die • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Selectable output drive strength (DS) • Clock-stop capability • RoHS-compliant, “green” packaging • Programmable VSS (ODT) termination • Single-ended CK and DQS support

MIL:MT53E128M32D2DS-046 AIT A

MT53E128M32D2DS-046 AIT:A